发明名称 SWITCHING DEVICE WITH CHARGE DISTRIBUTION STRUCTURE
摘要 A semiconductor circuit includes a three-terminal high voltage semiconductor device, a charge distribution structure and a static discharge system. The charge distribution structure has a plurality of conductors with a floating potential. The charge distribution structure is capacitively coupled to a first terminal of the semiconductor device. The static discharge system removes charge that accumulates on at least a subset of the conductors. The static discharge system removes the charge that accumulates on the subset of conductors when the semiconductor device is in a first state while allowing charge to accumulate on the subset of conductors when the semiconductor device is in a second state.
申请公布号 EP2867924(A1) 申请公布日期 2015.05.06
申请号 EP20130737058 申请日期 2013.06.27
申请人 POWER INTEGRATIONS, INC. 发明人 KUDYMOV, ALEXEY
分类号 H01L29/778;H01L29/40 主分类号 H01L29/778
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