VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

A vertical memory device comprises a plurality of channels and conductive patterns extended from a substrate in a first direction which is vertical to a front surface of the substrate. Installed are a plurality of gate electrodes enclosing an outer wall of the channels and the conductive pattern, and sequentially stacked to be placed apart from one another in the first direction. A bit line is installed in an upper part of the channels, and is electrically connected to the channels. A conductive line is installed in an upper part of the conductive patterns, and is electrically connected to the conductive patterns. The degree of integration of the vertical memory device can be improved by optimizing the arrangement of the conductive patterns and the conductive line.