HYDROGEN ION SENSOR

摘要

The present invention relates to a hydrogen ion sensor. The hydrogen ion sensor comprises: a first conductive type substrate; a second conductive type well formed on the substrate, and a first contact of the first conductive type; a second contact on the second conductive type; a third contact of the first conductive type; a fourth contact and a fifth contact; a first gate insulation layer formed between the fourth contact and the fifth contact; a first substrate layer formed on the first gate insulation layer; a second gate insulation layer formed on the area between the third contact and the fourth contact; a second substrate layer formed on the second gate insulation layer; and a hydrogen ion sensor formed on the first gate insulation layer, and adjusted in accordance with the hydrogen ion consistency of the subject which transfers the adjusted voltage level to the first gate insulation layer.