METHOD FOR FABRICATING SILICENE LAYERS UPON A SUBSTRATE OF CRYSTALLINE BETA-SILICON NITRIDE

摘要

Method for fabricating a structure comprising a monatomic layer of crystalline silicon upon an electrically insulating layer of crystalline silicon nitride in theβstructural form, comprising the following steps: A. providing a standalone Si (111) substrate, said substrate comprising a first face and a second main face; B. thermally treating the substrate so that the Si (111) surface is clean, i.e. non contaminated at an atomic level; C. thermally growing a crystalline silicon nitride layer in the 13 structural form on at least one face of said Si (111) substrate; D. thermally growing a crystalline silicon monatomic layer on the crystalline silicon nitride layer.