| 摘要 |
In a method of fabricating a vertical nitride-based transistor according to an embodiment, a nitride-based first semiconductor layer doped with a first type, an insulating current blocking layer, a nitride-based second semiconductor layer doped with a second type, and a nitride-based third semiconductor layer doped with a third type are successively formed on a growth substrate. A first trench which is extended from the third semiconductor layer to the inside of the first semiconductor layer is formed. A nitride-based fourth first trench layer doped with a first type which is filled in the first trench is formed. A second trench is formed in the fourth semiconductor. A gate electrode is formed in the second trench. A source electrode which is electrically connected to the third semiconductor layer or the fourth semiconductor layer is formed. A drain electrode which is electrically connected to the first semiconductor layer is formed. |
