发明名称 |
Gan crystal and method for manufacturing semiconductor element |
摘要 |
The present invention addresses the problem of obtaining a zinc blende GaN crystal with low dislocation density. A method for manufacturing a GaN crystal is characterized in forming, on an Si substrate, a zinc blende BP crystal layer, a layer containing In being formed on the BP crystal layer at a thickness for maintaining the zinc blende crystal structure, and a zinc blende GaN crystal layer being formed on the layer containing In. The layer containing In is: a metal In layer no more than four atoms thick; an InGaN layer having a thickness of 2 nm or less; and an InAl blended layer no more than four atoms thick, having an Al content of no more than 10%, or an AlInGaN layer having a thickness of 2 nm or less, having an Al content of no more than 10%. The Si substrate preferably has an off angle from the (100) orientation of 3-23°. |
申请公布号 |
GB2519895(A) |
申请公布日期 |
2015.05.06 |
申请号 |
GB20150003010 |
申请日期 |
2013.08.27 |
申请人 |
NITTO OPTICAL CO., LTD.;SOLARTES LAB., LTD |
发明人 |
KAZUTAKA TERASHIMA;SUZUKA NISHIMURA;MUNEYUKI HIRAI |
分类号 |
H01L21/205;C23C16/30;H01L21/02;H01L33/00;H01L33/32 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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