| 摘要 |
The present invention relates to a cell string capable of implementing neuromorphic technology. The cell string includes a fence type semiconductor which is formed with twin pins which are separated by a trench, a body electrode which is formed in the trench with an insulation material coated on a sidewall thereof, a gate insulation stack which is formed on the surface of the fence type semiconductor with a stack structure, and a plurality of control electrodes which are formed on the upper side of the gate insulation stack. Each cell device operates as a tunneling transistor or a gated diode according to a bias condition, senses a charge stored in a charge storage layer of the gate insulation stack, and supplies the charge to a bit line. Thereby, various functions of a synapse are modeled by copying the excitatory transmission function of the synapse or copying the suppression function of the synapse by operating as a MOS transistor or a nonvolatile transistor. |
