发明名称 |
EPITAXIAL WAFER, LIGHT-RECEIVING ELEMENT, OPTICAL SENSOR DEVICE, AND METHOD FOR MANUFACTURING EPITAXIAL WAFER AND LIGHT-RECEIVING ELEMENT |
摘要 |
<p>Provided are an epitaxial wafer, a photodiode, and the like that include an antimony-containing layer and can be efficiently produced such that protruding surface defects causing a decrease in the yield can be reduced and impurity contamination causing degradation of the performance can be suppressed. The production method includes a step of growing an antimony (Sb)-containing layer on a substrate 1 by metal-organic vapor phase epitaxy using only metal-organic sources; and a step of growing, on the antimony-containing layer, an antimony-free layer including a window layer 5, wherein, from the growth of the antimony-containing layer to completion of the growth of the window layer, the growth is performed at a growth temperature of 425°C or more and 525°C or less.</p> |
申请公布号 |
EP2626890(A4) |
申请公布日期 |
2015.05.06 |
申请号 |
EP20110830608 |
申请日期 |
2011.10.03 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
FUJII, KEI;AKITA, KATSUSHI;ISHIZUKA, TAKASHI |
分类号 |
H01L21/205;B82Y20/00;C23C16/30;C30B25/10;C30B25/18;C30B29/40;H01L21/02;H01L31/0352;H01L31/10;H01L31/105;H01L31/18 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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