Episubstrates for selective area growth of group iii-v material and a method for fabricating a group iii-v material on a silicon substrate

摘要

The embodiments of the present invention disclose a silicon substrate with a group III-V material and a method for fabricating a group III-V material on a silicon substrate. The method involves providing a silicon substrate (101). A first layer (104) formed atop the silicon substrate (101), is subsequently patterned to expose the underlying silicon substrate (101). A group III-V material layer is formed over the patterned first layer (104) and also on the exposed silicon substrate (101). The group III-V material layer (103) is subjected to chemical mechanical polishing (CMP) to expose the first layer (103) resulting in the formation of a plurality of areas (106) suitable for growing a device layer on the silicon substrate (101).