| 摘要 |
<p>A method (100) of determining a value of a depth of a semiconductor junction (5) of a substrate (2) using a photomodulated optical reflectance measurement technique is described. The method comprises obtaining a substrate (2) having at least a first region (11) comprising the semiconductor junction, obtaining a reference region (11', 11",12), and performing at least one sequence of : selecting (110) a set of measurement parameters for the photomodulated optical reflectance measurement, measuring (120) on the at least a first region a first optical signal representative of the substrate with the semiconductor junction using the selected set of parameters,measuring (130) on the reference region a second optical signal using the selected set of parameters, and determining (140) the ratio of the first optical signal to the second optical signal, and thereafter extracting (150) from the ratio the depth of the semiconductor junction.</p> |
