Solar cell and method for making thereof

摘要

A solar cell includes a doped layer disposed on a first surface of a semiconductor substrate, a doped polysilicon layer disposed in a first region of a second surface of the semiconductor substrate, a doped area disposed in a second region of the second surface, and an insulating layer covering the doped polysilicon layer and the doped area. The insulating layer has openings exposing portions of the doped polysilicon layer and the doped layer, and the doped polysilicon layer and doped layer are respectively connected to a first electrode and a second electrode through the openings. The semiconductor substrate and the doped layer have a first doping type. One of the doped polysilicon layer and the doping area has a second doping type, and the other one of the doped polysilicon layer and the doping area has the first doping type which is opposite to the second doping type.

主权项

1. A method for making a solar cell, comprising:
providing a semiconductor substrate, having a first surface and a second surface, wherein the second surface has a first region and a second region and the semiconductor substrate has a first doping type; forming a doped polysilicon layer in the first region on the second surface of the semiconductor substrate, exposing the second region of the second surface of the semiconductor substrate; forming at least one doped area in the exposed second region of the second surface of the semiconductor substrate, wherein one of the doped polysilicon layer and the doped area has a second doping type, the other one of the doped polysilicon layer and the doped area has the first doping type, and the second doping type is opposite to the first doping type; forming an insulating layer to cover and being disposed on the doped polysilicon layer and the doped area, the insulating layer having at least one first opening exposing a portion of the doped polysilicon layer and at least one second opening exposing a portion of the doped area; forming a metal layer on the insulating layer with the first and second openings, the metal layer including:
at least one first electrode, connected to the doped polysilicon layer through the first opening; andat least one second electrode, connected to the doped area through the second opening; and forming a doped layer to cover and being disposed on the first surface of the semiconductor substrate to cover the first surface, wherein the doped layer has the first doping type.