Group III-V ferromagnetic/non-magnetic semiconductor heterojunctions and magnetodiodes

摘要

Ferromagnetic Group III-V semiconductor/non-magnetic Group III-V semiconductor heterojunctions, with a magnetodiode device, to detect heterojunction magnetoresistance responsive to an applied magnetic field.

主权项

1. A junction device comprising a heterojunction composite comprising a p-type Group III-V ferromagnetic semiconductor component comprising a compound of a formula
(MIII1-xMTMx)MV and an n-type Group III-V non-magnetic semiconductor component comprising a compound of a formula (MIIIMV), wherein MIII comprises a Group III metal component, MTM comprises a magnetic transition metal component and MV comprises a Group V metal component, and x is less than about 0.2; a diode coupled to said ferromagnetic semiconductor component and said non-magnetic semiconductor component of a said heterojunction composite; and a voltage source for application of voltage across said device; said device positioned in an applied magnetic field,whereby magnetoresistance of said heterojunction composite responsive to said applied magnetic field is positive under said magnetic field applied from about parallel to about perpendicular to direction of a current flow through said diode of said device.