Fin-type transistor structures with extended embedded stress elements and fabrication methods

摘要

Fin-type transistor fabrication methods and structures are provided having extended embedded stress elements. The methods include, for example: providing a gate structure extending over a fin extending above a substrate; using isotropic etching and anisotropic etching to form an extended cavity within the fin, where the extended cavity in part undercuts the gate structure, and where the using of the isotropic etching and the anisotropic etching deepens the extended cavity into the fin below the undercut gate structure; and forming an embedded stress element at least partially within the extended cavity, including below the gate structure.

主权项

1. A structure comprising a fin-type transistor, the fin-type transistor comprising:
a gate structure extending at least partially over a fin extending above a substrate; an extended cavity within the fin, wherein the extended cavity in part undercuts the gate structure, and extends into the fin below the undercut gate structure, wherein the fin comprises a {110} plane extending downward below the gate structure; and an embedded stress element disposed at least partially within the extended cavity, including below the gate structure, the embedded stress element comprising one of a drain or a source of the fin-type transistor.