发明名称 Semiconductor light emitting device and method for manufacturing the same
摘要 According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode and a fluorescent material layer. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface and includes a light emitting layer. The fluorescent material layer includes a plurality of fluorescent materials and a bonding material integrating the fluorescent materials. The fluorescent material layer includes a lower layer portion provided to spread over the entire first surface and having a larger thickness than a size of the fluorescent materials and an upper layer portion partially provided on the lower layer portion and having a larger thickness and a larger width than a size of the fluorescent materials. The fluorescent materials do not exist on a portion of the lower layer portion not provided with the upper layer portion.
申请公布号 US9024346(B2) 申请公布日期 2015.05.05
申请号 US201313848134 申请日期 2013.03.21
申请人 Kabushiki Kaisha Toshiba 发明人 Akimoto Yosuke;Kojima Akihiro;Shimada Miyoko;Tomizawa Hideyuki;Sugizaki Yoshiaki;Furuyama Hideto
分类号 H01L33/50;H01L33/44 主分类号 H01L33/50
代理机构 Holtz, Holtz, Goodman & Chick PC 代理人 Holtz, Holtz, Goodman & Chick PC
主权项 1. A semiconductor light emitting device comprising: a semiconductor layer having a first surface and a second surface on an opposite side to the first surface, and including a light emitting layer; a p-side electrode provided on the semiconductor layer on a side of the second surface; an n-side electrode provided on the semiconductor layer on the side of the second surface; a fluorescent material layer provided on a side of the first surface, the fluorescent material layer including a plurality of fluorescent materials and a bonding material, the fluorescent materials being configured to be excited by radiated light of the light emitting layer and to radiate light of a different wavelength from the radiated light of the light emitting layer, and the bonding material integrating the fluorescent materials and being configured to transmit the radiated light of the light emitting layer and the radiated light of the fluorescent materials; and a recess provided in the fluorescent material layer, the recess extending with a constant width in a first direction; wherein the fluorescent material layer includes: a lower layer portion provided to spread over the entire first surface and having a larger thickness than a size of the fluorescent materials; andan upper layer portion partially provided on the lower layer portion and having a larger thickness and a larger width than a size of the fluorescent materials; and wherein the fluorescent materials are not provided in the recess, and the recess is provided on a portion of the lower layer portion on which the upper layer portion is not provided.
地址 Tokyo JP