Semiconductor device and method of manufacturing semiconductor device

摘要

A semiconductor device includes a first insulating film formed above a semiconductor substrate, a fuse formed above the first insulating film, a second insulating film formed above the first insulating film and the fuse and including an opening reaching the fuse, and a third insulating film formed above the second insulating film and in the opening.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; a first insulating film formed above the semiconductor substrate; a fuse formed above the first insulating film, the fuse including a first region and a second region; a fourth insulating film formed on the first insulating film and the fuse, whole of the side surface of the fuse of the first region being covered by a part of the fourth insulating film; a second insulating film formed above the first insulating film and formed on the fuse, the second insulating film including an opening formed therethrough, the opening exposing the part of the fourth insulating film; and a third insulating film formed above the second insulating film and in the opening, whole of the part of the fourth insulating film being covered by the third insulating film.