Solid-state imaging device and method of manufacturing solid-state imaging device

摘要

Provided is a solid-state imaging device including: a photodiode which converts an optical signal to signal charges; a transfer gate which transfers the signal charges from the photodiode; an impurity diffusion layer to which the signal charges are transferred by the transfer gate; and a MOS transistor of which a gate is connected to the impurity diffusion layer. The impurity diffusion layer has a first conduction type semiconductor layer and a second conduction type semiconductor layer which is formed in the first conduction type semiconductor layer and under an end portion of the transfer gate.

主权项

1. A solid-state imaging device comprising:
a substrate; a photodiode configured to convert an optical signal to signal charges; a transfer gate on the substrate and configured to transfer the signal charges from the photodiode; an impurity diffusion layer configured to receive the signal charges from the transfer gate; and a transistor having a gate connected to the impurity diffusion layer, wherein,
the impurity diffusion layer has a first conduction type semiconductor layer and a second conduction type semiconductor layer, the first conduction type semiconductor layer and the second conduction type semiconductor layer being impurity regions of the substrate that are (a) opposite conduction types and (b) different in composition from that of the substrate,the first conduction type semiconductor layer has an uppermost surface exposed at a top surface of the substrate, andthe second conduction type semiconductor layer overlaps the first conduction type semiconductor layer and has a portion disposed under an end portion of the transfer gate.