Ultrathin body fully depleted silicon-on-insulator integrated circuits and methods for fabricating same

摘要

Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing an ultrathin body (UTB) fully depleted silicon-on-insulator (FDSOI) substrate. A PFET temporary gate structure and an NFET temporary gate structure are formed on the substrate. The method implants ions to form lightly doped active areas around the gate structures. A diffusionless annealing process is performed on the active areas. Further, a compressive strain region is formed around the PFET gate structure and a tensile strain region is formed around the NFET gate structure.

主权项

1. A method for fabricating an integrated circuit comprising:
providing an ultrathin body fully depleted silicon-on-insulator substrate; forming a PFET temporary gate structure and an NFET temporary gate structure on the substrate; implanting ions to form lightly doped active areas around the gate structures; performing a diffusionless annealing process on the active areas; forming a compressive strain region around the PFET gate structure by growing a boron-doped silicon germanium (SiGe) layer having a germanium content of about 20% to about 30% and a boron concentration of about 1e20 to about 5e20 ions/cm3; growing a boron-doped germanium-free silicon layer having a boron concentration of about 1e20 to about 5e20 ions/cm3 overlying the boron-doped SiGe layer; and forming a tensile strain region around the NFET gate structure.