| 发明名称 | Laminated structure and method for producing the same | ||
| 摘要 | Provided by the present invention is a laminated structure with good use efficiency, in which diffusion of tin from an indium-tin solder material to an indium target is favorably suppressed, and a method for producing the same. The laminated structure has a backing plate, an indium-tin solder material, and an indium target laminated in this order, and the concentration of tin in the 2.5 to 3.0 mm thickness range of the indium target from the indium-tin solder material side surface is 5 wtppm or less. | ||
| 申请公布号 | US9023487(B2) | 申请公布日期 | 2015.05.05 |
| 申请号 | US201213808009 | 申请日期 | 2012.07.25 |
| 申请人 | JX Nippon Mining & Metals Corporation | 发明人 | Endo Yousuke;Sakamoto Masaru |
| 分类号 | B32B15/00;B23K35/00;B23K1/00;B23K35/26;C23C14/34;B23K1/19 | 主分类号 | B32B15/00 |
| 代理机构 | Nields, Lemack & Frame, LLC | 代理人 | Nields, Lemack & Frame, LLC |
| 主权项 | 1. A laminated structure comprising: a backing plate; an indium-tin solder material, wherein a thickness of the indium-tin solder material is between 0.1 mm and 0.5 mm; and an indium target, the structure laminated in this order, wherein a concentration of tin in a 2.5 to 3.0 mm thickness range within the indium target, as measured from a indium-tin solder material side surface, is 5 wtppm or less. | ||
| 地址 | Tokyo JP | ||