Voltage generation and adjustment in a memory device

摘要

Voltage generation devices and methods are useful in determining a data state of a selected memory cell in a memory device. Voltages can be generated in response to a first current and a second current. The first current is responsive to a memory device operation and a memory cell data state associated with the memory device operation, while the second current is responsive to a temperature associated with the memory device and to the memory cell data state associated with the memory device operation.

主权项

1. A memory device, comprising:
an array of memory cells; and a voltage generator comprising a first adjustable current source for sourcing a first current and a second adjustable current source for sourcing a second current, wherein the voltage generator is configured to supply an access line voltage to an access line of the array of memory cells responsive to the first current and the second current; wherein the first adjustable current source is responsive to data indicative of a selected mode of operation of the memory device and data indicative of a memory cell data state associated with the selected mode of operation; and wherein the second adjustable current source is responsive to data indicative of a temperature associated with the memory device and to the data indicative of the memory cell data state.