| 发明名称 | Semiconductor device and manufacturing method thereof | ||
| 摘要 | A semiconductor device according to the present embodiment includes a semiconductor substrate. A lower-layer wiring is provided above a surface of the semiconductor substrate. An interlayer dielectric film is provided on the lower-layer wiring and includes a four-layer stacked structure. A contact plug contains aluminum. The contact plug is filled in a contact hole formed in the interlayer dielectric film in such a manner that the contact plug reaches the lower-layer wiring. Two upper layers and two lower layers in the stacked structure respectively have tapers on an inner surface of the contact hole. The taper of two upper layers and the taper of two lower layers have different angles from each other. | ||
| 申请公布号 | US9024443(B2) | 申请公布日期 | 2015.05.05 |
| 申请号 | US201313836215 | 申请日期 | 2013.03.15 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Inaba Merii;Hizawa Takeshi |
| 分类号 | H01L23/12;H01L23/52;H01L29/40;H01L21/768;H01L23/522;H01L23/532;H01L27/115 | 主分类号 | H01L23/12 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A semiconductor device comprising: a semiconductor substrate; a lower-layer wiring provided above a surface of the semiconductor substrate; an interlayer dielectric film provided on the lower-layer wiring and including a four-layer stacked structure; and a contact plug containing aluminum, the contact plug being filled in a contact hole formed in the interlayer dielectric film in such a manner that the contact plug reaches the lower-layer wiring, wherein two upper layers and two lower layers in the stacked structure respectively have tapers on an inner surface of the contact hole, the taper of two upper layers and the taper of two lower layers have different angles from each other. | ||
| 地址 | Tokyo JP | ||