Semiconductor device and method for forming the same

摘要

A semiconductor device in which a gettering layer is formed in a semiconductor substrate, and a method for forming the same are disclosed, resulting in increased reliability of the semiconductor substrate including the gettering layer. The semiconductor device includes a semiconductor substrate; a gettering layer formed of a first-type impurity and a second-type impurity in the semiconductor substrate so as to perform gettering of metal ion; and a deep-well region formed over the gettering layer in the semiconductor substrate.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; a gettering layer including a first-type impurity and a second-type impurity in the semiconductor substrate and configured to getter metal impurities; and a deep-well region formed over the gettering layer and provided in the semiconductor substrate.