Thick film silver paste and its use in the manufacture of semiconductor devices

摘要

The present invention is directed to an electroconductive silver thick film paste composition comprising Ag, a glass frit and rhodium resinate, Cr2O3 or a mixture thereof all dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. The paste is particularly useful for forming a tabbing electrode.

主权项

1. A thick film paste composition comprising:
(a) 35-55 wt % Ag; (b) 0.5-6 wt % glass frit, wherein said glass frit is a Pb-free bismuth-tellurium-oxide consisting of 22-42 wt % Bi2O3, 58-78 wt % TeO2, 0.1-7 wt % Li2O and 0.1-4 wt % TiO2, based on the total weight of said bismuth-tellurium-oxide; (c) 0.08-0.4 wt % of a component selected from the group consisting of rhodium resinate, Cr2O3 and mixtures thereof; and (d) organic medium;wherein said Ag, said glass frit and said component selected from the group consisting of rhodium resinate, Cr2O3 and mixtures thereof are dispersed in said organic medium and wherein the wt % of said Ag, said glass frit and said component selected from the group consisting of rhodium resinate, Cr2O3 and mixtures thereof are based on the total weight of said paste composition.