Horizontally oriented and vertically stacked memory cells

摘要

Horizontally oriented and vertically stacked memory cells are described herein. One or more method embodiments include forming a vertical stack having a first insulator material, a first memory cell material on the first insulator material, a second insulator material on the first memory cell material, a second memory cell material on the second insulator material, and a third insulator material on the second memory cell material, forming an electrode adjacent a first side of the first memory cell material and a first side of the second memory cell material, and forming an electrode adjacent a second side of the first memory cell material and a second side of the second memory cell material.

主权项

1. A memory device, comprising:
at least two vertically stacked memory cells, wherein each of the memory cells include:
a memory cell material having a recess formed therein;a first electrode in direct contact with a single first side of the memory cell material; anda second electrode in the recess and in direct contact with a single second side of the memory cell material.