| 发明名称 | Compound semiconductor device with buried field plate | ||
| 摘要 | A semiconductor device includes a first compound semiconductor material and a second compound semiconductor material on the first compound semiconductor material. The second compound semiconductor material comprises a different material than the first compound semiconductor material such that the first compound semiconductor material has a two-dimensional electron gas (2DEG). The semiconductor device further includes a buried field plate disposed in the first compound semiconductor material and electrically connected to a terminal of the semiconductor device. The 2DEG is interposed between the buried field plate and the second compound semiconductor material. | ||
| 申请公布号 | US9024356(B2) | 申请公布日期 | 2015.05.05 |
| 申请号 | US201113331970 | 申请日期 | 2011.12.20 |
| 申请人 | Infineon Technologies Austria AG | 发明人 | Curatola Gilberto;Häberlen Oliver |
| 分类号 | H01L29/778;H01L29/40;H01L29/423 | 主分类号 | H01L29/778 |
| 代理机构 | Murphy, Bilak & Homiller, PLLC | 代理人 | Murphy, Bilak & Homiller, PLLC |
| 主权项 | 1. A semiconductor device, comprising: a first compound semiconductor material; a second compound semiconductor material on the first compound semiconductor material, the second compound semiconductor material comprising a different material than the first compound semiconductor material such that the first compound semiconductor material has a two-dimensional electron gas (2DEG); and a buried field plate disposed in the first compound semiconductor material and electrically connected to a terminal of the semiconductor device, the 2DEG being interposed between the buried field plate and the second compound semiconductor material, wherein the buried field plate lowers maximum electric field peaks and enhances breakdown strength of the semiconductor device. | ||
| 地址 | Villach AT | ||