发明名称 |
Oxide superconductor, oriented oxide thin film, and method for manufacturing oxide superconductor |
摘要 |
According to one embodiment, an oxide superconductor includes an oriented superconductor layer and an oxide layer. The oriented superconductor layer contains fluorine at 2.0×1016-5.0×1019 atoms/cc and carbon at 1.0×1018-5.0×1020 atoms/cc. The superconductor layer contains in 90% or more a portion oriented along c-axis with an in-plane orientation degree (Δφ) of 10 degrees or less, and contains a LnBa2Cu3O7-x superconductor material (Ln being yttrium or a lanthanoid except cerium, praseodymium, promethium, and lutetium). The oxide layer is provided in contact with a lower surface of the superconductor layer and oriented with an in-plane orientation degree (Δφ) of 10 degrees or less with respect to one crystal axis of the superconductor layer. Area of a portion of the lower surface of the superconductor layer in contact with the oxide layer is 0.3 or less of area of a region directly below the superconductor layer. |
申请公布号 |
US9023764(B2) |
申请公布日期 |
2015.05.05 |
申请号 |
US201313766994 |
申请日期 |
2013.02.14 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Araki Takeshi;Hayashi Mariko;Yamada Ko;Fuke Hiroyuki |
分类号 |
H01B12/06;H01L39/24;B05D5/12;B32B18/00;C04B35/45;H01L39/12;C04B35/624 |
主分类号 |
H01B12/06 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. An oxide superconductor comprising:
an oriented superconductor layer containing fluorine at 2.0×1016-5.0×1019 atoms/cc and carbon at 1.0×1018-5.0×1020 atoms/cc, containing in 90% or more a portion oriented along c-axis with an in-plane orientation degree (Δφ) of 10 degrees or less, and containing a LnBa2Cu3O7-x superconductor material (wherein Ln being yttrium (Y) or a lanthanoid except cerium (Ce), praseodymium (Pr), promethium (Pm), and lutetium (Lu); and an oxide layer provided in contact with a lower surface of the oriented superconductor layer and oriented with an in-plane orientation degree (Δφ) of 10 degrees or less with respect to one crystal axis of the oriented superconductor layer, area of a portion of the lower surface of the oriented superconductor layer in contact with the oxide layer being 0.3 or less of area of a region directly below the oriented superconductor layer. |
地址 |
Tokyo JP |