| 发明名称 | Method for forming conformal, homogeneous dielectric film by cyclic deposition and heat treatment | ||
| 摘要 | A method for forming a conformal, homogeneous dielectric film includes: forming a conformal dielectric film in trenches and/or holes of a substrate by cyclic deposition using a gas containing a silicon and a carbon, nitrogen, halogen, hydrogen, and/or oxygen, in the absence of a porogen gas; and heat-treating the conformal dielectric film and continuing the heat-treatment beyond a point where substantially all unwanted carbons are removed from the film and further continuing the heat-treatment to render substantially homogeneous film properties of a portion of the film deposited on side walls of the trenches and/or holes and a portion of the film deposited on top and bottom surfaces of the trenches and/or holes. | ||
| 申请公布号 | US9023737(B2) | 申请公布日期 | 2015.05.05 |
| 申请号 | US201313923197 | 申请日期 | 2013.06.20 |
| 申请人 | ASM IP Holding B.V. | 发明人 | Beynet Julien;Raaijmakers Ivo;Fukazawa Atsuki |
| 分类号 | H01L21/31;H01L21/469;H01L21/02;C23C16/34;C23C16/455;C23C16/56 | 主分类号 | H01L21/31 |
| 代理机构 | Snell & Wilmer LLP | 代理人 | Snell & Wilmer LLP |
| 主权项 | 1. A method for forming a conformal, homogeneous dielectric film having at least Si—N or Si—O bonds by cyclic deposition, comprising: forming a conformal dielectric film in trenches and/or holes of a substrate by cyclic deposition using a gas containing a silicon and a carbon, nitrogen, halogen, hydrogen, and/or oxygen, in the absence of a porogen gas; and heat-treating the conformal dielectric film and continuing the heat-treatment beyond a point where substantially all unwanted carbons are removed from the film and further continuing the heat-treatment to render substantially homogeneous film properties of a portion of the film deposited on side walls of the trenches and/or holes and a portion of the film deposited on top and bottom surfaces of the trenches and/or holes. | ||
| 地址 | Almere NL | ||