Dielectric reliability assessment for advanced semiconductors

摘要

Embodiments relate to methods, computer systems and computer program products for performing a dielectric reliability assessment for an advanced semiconductor. Embodiments include receiving data associated with a test of a macro of the advanced semiconductor to a point of dielectric breakdown. Embodiments also include scaling the data for the macro down to a reference area and extracting a parameter for a Weibull distribution from the scaled down data for the reference area. Embodiments further include deriving a cluster factor (α) from the scaled down data for the reference area and projecting a failure rate for a larger area of the advanced semiconductor based on the extracted parameter, the cluster factor and the recorded data associated with the dielectric breakdown of the macro.

主权项

1. A computer implemented method for performing a dielectric reliability assessment for an advanced semiconductor, the method comprising:
receiving data associated with a test of a macro of the advanced semiconductor to a point of dielectric breakdown; scaling, by a processor, the data for the macro down to a reference area; extracting a parameter for a Weibull distribution from the scaled down data for the reference area; deriving a cluster factor (α) from the scaled down data for the reference area; and projecting a failure rate for a larger area of the advanced semiconductor based on the extracted parameter, the cluster factor and the recorded data associated with the dielectric breakdown of the macro, wherein the parameter include a Weibull shape factor (β) and scale factor (τ) and wherein the Weibull shape factor (β), the scale factor (τ) and the clustering factor (α) are extracted according to:F=1-(1+1α⁢(tτ)β)-α.