| 发明名称 | Memory device and electronic apparatus | ||
| 摘要 | A memory device includes: a memory including a first magnetic layer having no retaining force and a second magnetic layer having a retaining force, the first magnetic layer and the second magnetic layer being stacked; a first magnet to magnetize the first magnetic layer in a first direction; and a second magnet to apply a magnetic field to a region through which the memory passes when the memory is removed and to magnetize the second magnetic layer in a second direction. | ||
| 申请公布号 | US9025363(B2) | 申请公布日期 | 2015.05.05 |
| 申请号 | US201213585035 | 申请日期 | 2012.08.14 |
| 申请人 | Fujitsu Limited | 发明人 | Sato Junichi |
| 分类号 | G11C11/00;G11C11/16 | 主分类号 | G11C11/00 |
| 代理机构 | Staas & Halsey LLP | 代理人 | Staas & Halsey LLP |
| 主权项 | 1. A memory device comprising: a memory including a first magnetic layer having no retaining force and a second magnetic layer having a retaining force, the first magnetic layer and the second magnetic layer being stacked; a first magnet to magnetize the first magnetic layer in a first direction; and a second magnet to apply a magnetic field to a region through which the memory passes when the memory is removed and to magnetize the second magnetic layer in a second direction. | ||
| 地址 | Kawasaki JP | ||