发明名称 Method for fabricating a planar micro-tube discharger structure
摘要 A method for fabricating a semiconductor-based planar micro-tube discharger structure is provided, including the steps of forming on a substrate two patterned electrodes separated by a gap and at least one separating block arranged in the gap, forming an insulating layer over the patterned electrodes and the separating block, and filling the insulating layer into the gap. At least two discharge paths are formed. The method can fabricate a plurality of discharge paths in a semiconductor structure, the structure having very high reliability and reusability.
申请公布号 US9024516(B2) 申请公布日期 2015.05.05
申请号 US201314109297 申请日期 2013.12.17
申请人 Amazing Microelectronic Corp. 发明人 Chen Tung-Yang;Ker Ming-Dou;Jiang Ryan Hsin-Chin
分类号 H01J1/88;H01J19/42;H01K1/18;H02H9/00;H01H47/00;H05F3/00;H01J9/02;H01J17/06 主分类号 H01J1/88
代理机构 Muncy, Geissler, Olds & Lowe, P.C. 代理人 Muncy, Geissler, Olds & Lowe, P.C.
主权项 1. A method for fabricating a planar micro-tube discharger structure, comprising steps: forming on a substrate two patterned electrodes separated by a gap and at least one separating block arranged in said gap; and forming a first insulating layer over said patterned electrodes and said separating block and filling said first insulating layer into said gap to create at least two discharge paths interconnecting said patterned electrodes.
地址 New Taipei TW