Semiconductor device with a super junction structure with one, two or more pairs of compensation layers

摘要

A super junction semiconductor device comprises a semiconductor portion with mesa regions protruding from a base section. The mesa regions are spatially separated in a lateral direction parallel to a first surface of the semiconductor portion. A compensation structure with at least two first compensation layers of a first conductivity type and at least two second compensation layers of a complementary second conductivity type may cover sidewalls of the mesa regions and portions of the base section between the mesa regions. Buried lateral faces of segments of the compensation structure may cut the first and second compensation layers between the mesa regions. A drain connection structure of the first conductivity type may extend along the buried lateral faces and may structurally connect the first compensation layers in an economic way keeping the thermal budget low.

主权项

1. A super junction semiconductor device comprising:
a semiconductor portion comprising mesa regions protruding from a base section and spatially separated in a lateral direction parallel to a first surface of the semiconductor portion; a compensation structure comprising at least two first compensation layers of a first conductivity type and at least two second compensation layers of a complementary second conductivity type, the compensation structure covering at least sidewalls of the mesa regions and portions of the base section between the mesa regions, wherein buried lateral faces of segments of the compensation structure cut the first and second compensation layers between the mesa regions; and a drain connection structure of the first conductivity type extending along the buried lateral faces and structurally connecting the first compensation layers.