| 发明名称 | Film deposition method | ||
| 摘要 | A film deposition method, in which a film of a reaction product of a first reaction gas, which tends to be adsorbed onto hydroxyl radicals, and a second reaction gas capable of reacting with the first reaction gas is formed on a substrate provided with a concave portion, includes a step of controlling an adsorption distribution of the hydroxyl radicals in a depth direction in the concave portion of the substrate; a step of supplying the first reaction gas on the substrate onto which the hydroxyl radicals are adsorbed; and a step of supplying the second reaction gas on the substrate onto which the first reaction gas is adsorbed. | ||
| 申请公布号 | US9023738(B2) | 申请公布日期 | 2015.05.05 |
| 申请号 | US201414458319 | 申请日期 | 2014.08.13 |
| 申请人 | Tokyo Electron Limited | 发明人 | Kato Hitoshi;Tamura Tatsuya;Kumagai Takeshi |
| 分类号 | H01L21/00;C23C16/455;H01L21/30;H01L21/02;C23C16/04;C23C16/40;H01L21/762;C23C14/00 | 主分类号 | H01L21/00 |
| 代理机构 | IPUSA, PLLC | 代理人 | IPUSA, PLLC |
| 主权项 | 1. A film deposition method using a film deposition apparatus including a chamber into which a first reaction gas, which tends to be adsorbed onto hydroxyl radicals, and a second reaction gas capable of reacting with the first reaction gas are supplied, and a turntable provided in the chamber, a substrate provided with a concave portion being mounted on the turntable and a film of a reaction product of the first reaction gas and the second reaction gas being formed on the substrate, the method comprising: a step of controlling an adsorption distribution of the hydroxyl radicals in a depth direction in the concave portion of the substrate; a step of supplying the first reaction gas on the substrate onto which the hydroxyl radicals are adsorbed; and a step of supplying the second reaction gas on the substrate onto which the first reaction gas is adsorbed. | ||
| 地址 | Tokyo JP | ||