| 发明名称 | Method of manufacturing semiconductor memory device | ||
| 摘要 | A method of manufacturing a semiconductor memory device comprises forming a plurality of gate lines on a semiconductor substrate, forming an insulating layer on the gate lines, and performing a cleaning process using a surfactant-free cleaning solution having a viscosity of lower than 2 cP and an acidity of lower than 3 pH to remove residue from the surface of the insulating layer. | ||
| 申请公布号 | US9023724(B2) | 申请公布日期 | 2015.05.05 |
| 申请号 | US201213601785 | 申请日期 | 2012.08.31 |
| 申请人 | SK Hynix Inc. | 发明人 | Lee Duk Eui;Lee Seung Cheol |
| 分类号 | H01L27/115;H01L21/768;H01L21/02;C11D11/00 | 主分类号 | H01L27/115 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A method of manufacturing a semiconductor memory device, the method comprising: forming a plurality of gate lines on a semiconductor substrate; forming an insulating layer on the gate lines; and performing a cleaning process using a surfactant-free cleaning solution, having a viscosity of lower than 2 cP and an acidity of lower than 3 pH to remove residue from the surface of the insulating layer. | ||
| 地址 | Gyeonggi-do KR | ||