| 发明名称 | Method for electron beam induced etching | ||
| 摘要 | The invention relates to a method for electron beam induced etching of a material (100, 200) with the method steps providing at least one etching gas at a position of the material (100, 200) at which an electron beam impacts on the material (100, 200) and simultaneously providing at least one passivation gas which is adapted for slowing down or inhibiting a spontaneous etching by the at least one etching gas. | ||
| 申请公布号 | US9023666(B2) | 申请公布日期 | 2015.05.05 |
| 申请号 | US200913058587 | 申请日期 | 2009.08.13 |
| 申请人 | Carl Zeiss SMS GmbH | 发明人 | Auth Nicole;Spies Petra;Becker Rainer;Hofmann Thorsten;Edinger Klaus |
| 分类号 | H01L21/00;H01L21/3065;H01L21/311;H01L21/3213 | 主分类号 | H01L21/00 |
| 代理机构 | Fish & Richardson P.C. | 代理人 | Fish & Richardson P.C. |
| 主权项 | 1. A method comprising: selecting a material to be etched using an electron beam and an etching gas; selecting a passivation gas from the group consisting of ammonia (NH3), nitrogen (N2), carbon tetrachloride (CCl4) and methane (CH4); selecting a ratio of a partial pressure of the etching gas to a partial pressure of the passivation gas so that the passivation gas inhibits spontaneous etching of the material by the etching gas; and simultaneously providing the etching gas and the passivation gas at a position of the material where the electron beam is absent so that the passivation gas inhibits spontaneous etching of the material by the etching gas at the position. | ||
| 地址 | Jena DE | ||