Methods and apparatus for combinatorial PECVD or PEALD

摘要

Apparatus and methods for depositing materials on a plurality of site-isolated regions on a substrate are provided. The deposition uses PECVD or PEALD. The apparatus include an inner chamber with an aperture and barrier that can be used to isolate the regions during the deposition and prevent the remaining portions of the substrate from being exposed to the deposition process. The process parameters for the deposition process are varied among the site-isolate regions in a combinatorial manner.

主权项

1. A method of depositing material on a substrate in a combinatorial manner, the method comprising:
providing a substrate comprising a plurality of site-isolated regions,
wherein the plurality of site-isolated regions comprises a first site-isolated region and a second site-isolated region,wherein a size of each of the plurality of site-isolated regions is determined by an aperture in a plate,
wherein the plate comprising the aperture is disposed between a plasma source and the substrate,wherein the aperture has an area less than that of the substrate, positioning the each of the plurality of site-isolated regions directly under the aperture using a substrate positioning system,
wherein the substrate positioning system comprises two displaced axes of rotation and a substrate support,
wherein the two displaced axes of rotation comprise an upper rotation axis and a lower rotation axis;
wherein the upper rotation axis comprises 360° of rotation, providing a first set of angular coordinates for the first site-isolated region and a second set of angular coordinates for the second site-isolated region,wherein the lower rotation axis comprises 60° of rotation, approximating a first set of radial coordinates for the first site-isolated region and a second set of radial coordinates for the second site-isolated region, andwherein the substrate support holds the substrate and moves the substrate in a vertical direction; depositing a first material on the first site-isolated region using plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD) under a first set of process parameters; varying the first set of process parameters in a combinatorial manner to yield a second set of process parameters; and depositing a second material on the second site-isolated region using PECVD or PEALD under the second set of process parameters; wherein at least one of the depositing a first material or the depositing a second material is further controlled by placing a barrier at an edge of the aperture,
wherein the barrier extends from the plate toward a surface of the substrate, andwherein the barrier is separated from the surface of the substrate by a gap.