发明名称 |
Method of forming a spacer patterning mask |
摘要 |
The present disclosure pertains to a method of forming a spacer patterning mask. The method entails: providing a substrate; depositing, on the substrate, an interface layer, a core film and a first hard mask; patterning the core film and the first hard mask to form strips; depositing a spacer patterning layer to cover the core film and the first hard mask in the intermediate pattern; planarizing the spacer patterning layer by using the first hard mask in the intermediate pattern as a stop layer; etching the planarized spacer patterning layer; dry etching the second hard mask to expose the partially-etched spacer patterning layer; dry etching the exposed spacer patterning layer to form a spacer pattern; and removing the remaining first hard mask and second hard mask and the core film to obtain the final spacer patterning mask. |
申请公布号 |
US9023224(B2) |
申请公布日期 |
2015.05.05 |
申请号 |
US201414278538 |
申请日期 |
2014.05.15 |
申请人 |
Semiconductor Manufacturing International (Shanghai) Corporation |
发明人 |
Wang Xinpeng;Zhang Haiyang |
分类号 |
B44C1/22;C03C15/00;C03C25/48;C23F1/00;H01L21/302;H01L21/461;H01L21/306;H01L21/308 |
主分类号 |
B44C1/22 |
代理机构 |
Innovation Counsel LLP |
代理人 |
Innovation Counsel LLP |
主权项 |
1. A method of forming a spacer patterning mask, comprising:
providing a substrate; depositing, on the substrate, an interface layer, a core film and a first hard mask; patterning the core film and the first hard mask to form strips that include the core film and the first hard mask, wherein a first separation distance between neighboring strips is based on a second separation distance between patterns of the spacer patterning mask; depositing a spacer patterning layer over the core film and the first hard mask; planarizing the spacer patterning layer by using the first hard mask as a stop layer, wherein the planarizing comprises using chemical mechanical polishing (CMP); etching the spacer patterning layer, wherein an amount of etching is determined based on a separation distance and dimensions of patterns in the spacer patterning mask; depositing a second hard mask; dry etching the second hard mask to expose the spacer patterning layer, wherein a third separation distance between sections of the second hard mask has a predefined relation to the second separation distance between patterns of the spacer patterning mask; dry etching the spacer patterning layer to form a spacer pattern; removing the first hard mask and second hard mask; and removing the core film to obtain the spacer patterning mask. |
地址 |
CN |