| 发明名称 | Pattern forming method | ||
| 摘要 | According to one embodiment, a pattern forming method includes forming a first guide layer on a processed film, phase-separating a first self-assembly material with the use of the first guide layer to form a first self-assembly pattern including a first polymer portion and a second polymer portion, selectively removing the first polymer portion, forming a second guide layer with the use of the second polymer portion, and phase-separating a second self-assembly material with the use of the second guide layer to form a second self-assembly pattern including a third polymer portion and a fourth polymer portion. | ||
| 申请公布号 | US9023222(B2) | 申请公布日期 | 2015.05.05 |
| 申请号 | US201314018939 | 申请日期 | 2013.09.05 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Kawanishi Ayako;Ito Shinichi;Kato Hirokazu;Maeda Shimon;Kanai Hideki |
| 分类号 | B44C1/22;H01L21/027;B81C1/00;H01L21/033;H01L21/311 | 主分类号 | B44C1/22 |
| 代理机构 | Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P. | 代理人 | Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P. |
| 主权项 | 1. A pattern forming method comprising: forming a first guide layer on a processed film; phase-separating a first self-assembly material with the use of the first guide layer to form a first self-assembly pattern including a first polymer portion and a second polymer portion; selectively removing the first polymer portion; forming a second guide layer with the use of the second polymer portion and the first guide layer; and phase-separating a second self-assembly material with the use of the second guide layer to form a second self-assembly pattern including a third polymer portion and a fourth polymer portion. | ||
| 地址 | Tokyo JP | ||