The present invention relates to an image sensor, which compensates the staebler-wronski effect of MOS from the change of threshold voltage in case of integrating a photo diode on the same substrate with an MOS circuit which implements an amplifier, and the method thereof. The present invention includes: a photoelectric transducer which generates charge from photoelectric transformation at each pixel; an amplifier part which amplifies the current from a charge generated at each pixel; a compensating part applying the compensation voltage which compensates a threshold voltage on at least one of the multiple transistors composing the amplifier part.
申请公布号
KR20150047005(A)
申请公布日期
2015.05.04
申请号
KR20130126702
申请日期
2013.10.23
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
JUNG, MYOUNG HOON;KIM, JUNG WOO;YUN, YOUNG JUN;AHN, SEUNG EON