在铜金属化中用于自形成阻障制程之电子迁移增进方法;ELECTRO-MIGRATION ENHANCING METHOD FOR SELF-FORMING BARRIER PROCESS IN COPPER METALLIZATION

摘要

提供一种形成阻障在导孔之侧壁及底部上之方法及所产生的元件。实施例包括：形成金属线在基板中；形成矽基绝缘层在该金属线及该基板上方；向下形成导孔在该矽基绝缘层中直到该金属线；形成双层的锰(Mn)/氮化锰(MnN)在该导孔的侧壁及底面上；以及以金属填充该导孔。; forming a Si-based insulating layer over the metal line and the substrate; forming a via in the Si-based insulating layer down to the metal line; forming a dual-layer Mn/ MnN on sidewalls and a bottom surface of the via; and filling the via with metal.