横向双扩散金氧半导体装置及其制造方法;LATERAL DOUBLE DIFFUSED METAL-OXIDE-SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

一种横向双扩散金氧半导体装置，包括：半导体基板；磊晶半导体层，形成于该半导体基板上；闸极结构，设置于该磊晶半导体层上；第一掺杂区，设置于邻近该闸极结构之一第一侧之该磊晶半导体层内；第二掺杂区，设置于相对该闸极结构之该第一侧之一第二侧之该磊晶半导体层内；第三掺杂区，设置于该第一掺杂区内；第四掺杂区，设置于该第二掺杂区内；沟槽，形成于该第三掺杂区、该第一掺杂区与该第一掺杂区下方之该磊晶半导体层中；导电接触物，位于该沟槽内；以及第五掺杂区，设置于该第一掺杂区下方之该磊晶半导体层内。; an epitaxial semiconductor layer disposed over the semiconductor substrate; a gate structure disposed over the epitaxial semiconductor layer; a first doping region disposed in the epitaxial semiconductor layer at a first side of the gate structure; a second doping region disposed in the epitaxial semiconductor layer at a second side of the gate structure; a third doping region disposed in the first doping region; a fourth doping region disposed in the second doping region; a trench formed in the third doping region, the first doping region and the epitaxial semiconductor layer under the first doping region; a conductive contact formed in the trench; and a fifth doping region disposed in the epitaxial semiconductor layer under the trench.