发光二极体结构;LIGHT EMITTING DIODE STRUCTURE

摘要

一发光二极体结构，包括：一第一型半导体层，包括一发光区与一非发光区；一主动层及一第二型半导体层依序堆叠于位在发光区之第一型半导体层上；一透明导电层设于第二型半导体层上；一布拉格反射层设于透明导电层上，并具有一第一贯孔，裸露出透明导电层；一金属层设于布拉格反射层上，并填满第一贯孔且连接透明导电层；一保护层覆盖金属层，并具有一第二贯孔，裸露出金属层；一第三贯孔，裸露出第一型半导体层之非发光区；一第一电极，填满第三贯孔并与第一型半导体层连接；以及一第二电极，填满第二贯孔并与金属层连接。; an active layer and a second semiconductor layer sequentially disposed on the first semiconductor layer of the light-emitting region; a transparent conductive layer disposed on the second semiconductor layer; a Bragg reflector layer disposed on the transparent conductive layer, wherein the Bragg reflector layer has a first via hole for exposing the transparent conductive layer; a metal layer disposed on the Bragg reflector layer and connected to the transparent conductive layer through the first via hole; a passivation layer covering the metal layer, wherein the passivation layer has a second via hole for exposing the metal layer; a third via hole exposing the non light-emitting region of the first semiconductor layer; a first electrode connected to the first semiconductor layer through the third via hole; and a second electrode connected to the metal layer through the second via hole.