自我识别记忆体错误;SELF-IDENTIFYING MEMORY ERRORS

摘要

记忆体区域可在读取时耐久地自我识别为是故障的。可能已经被分配给故障记忆体区域的资讯可使用替换编码技术来被分配给记忆体中的另一那样尺寸的区域。对于相位变化记忆体而言，可对于耐久地自我识别故障记忆体区而提供至少两个故障状态；在最高阻抗范围的一个状态以及在最低阻抗范围的另一状态。在呈现自我识别的记忆故障时，替换记忆格可用以转移或分配资料。记忆体控制器及记忆体模组(单独或组合)可管理替换记忆格的使用，且若新发现的故障记忆格还不是在故障状态时，促进驱动该故障记忆格至故障状态。; one state at a highest resistance range and the other state at a lowest resistance range. Replacement cells can be used to shift or assign data when a self-identifying memory fault is present. A memory controller and memory module, alone or in combination may manage replacement cell use and facilitate driving a newly discovered faulty cell to a fault state if the faulty cell is not already at the fault state.