植体之表面处理方法;SURFACE TREATMENT METHOD FOR IMPLANTS

摘要

本发明系关于一种植体之表面处理方法，包括：提供一植体；以及使用原子层沉积法(Atomic layer deposition，ALD)形成一陶瓷层于该植体之表面。其中该陶瓷层之厚度范围为5~150nm；其均方根粗糙度系增加15nm以下；以及其摩擦系数之范围为0.1~0.5。于植体表面所形成之陶瓷层系具有极佳之均匀性且可完全包覆植体的表面，可有效阻挡由植体游离出的金属离子，并具有抗氧化以及抗腐蚀的作用，并可大幅提升植体的生物相容性。; and forming a ceramic layer on the surface of the implant by an atomic layer deposition method, wherein the thickness of the ceramic layer is 5~150 nm; the root mean square roughness of the ceramic layer is increased in a range of 15 nm of less; and the coefficient of friction of the ceramic layer is 0.1~0.5. The ceramic layer formed on the surface of the implant has excellent uniformity and is capable to entirely cover the whole surface of the implant. The ceramic layer formed on the surface of the implant can effectively block the free metal ions dissociating from the implant and perform anti-oxidation and anti-corrosion effect, and can greatly enhance the biocompatibility of the implant.