| 摘要 |
The invention relates to a multi-layer back electrode for a photovoltaic thin-film solar cell, comprising, in this order, at least one bulk back electrode layer, containing or substantially consisting of V, Mn, Cr, Mo, Co, Zr, Ta, Nb and/or W and/or containing or substantially consisting of alloys containing V, Mn, Cr, Mo, Co, Zr, Fe, Ni, AI, Ta, Nb and/or W; at least one conductive barrier layer; at least one, in particular ohmic contact layer, containing or substantially consisting of Mo, W, Ta, Nb, Zr and/or Co, in particular Mo and/or W, and/or containing or substantially consisting of at least one metal chalcogenide, and/or containing at least one first layer, adjacent to the barrier layer, containing or substantially consisting of Mo, W, Ta, Nb, Zr and/or Co, in particular Mo and/or W, and at least one second layer which is nonadjacent to the barrier layer, containing or substantially consisting of at least one metal chalcogenide. |
