| 摘要 |
The invention relates to a multi layer back electrode for a photovoltaic thin film solar cell comprising in this order at least one bulk back electrode layer (4) at least one in particular ohmic contact layer (8a, 8b) obtained by applying at least one layer containing or substantially consisting of at least one metal chalcogenide the metal being selected from molybdenum tungsten tantalum cobalt and/or niobium and the chalcogen being selected from selenium and/or sulfur by means of physical or chemical vapor deposition using at least one metal chalcogenide source or obtained by applying at least one metal layer (first layer 10) wherein the first layer and the bulk back electrode layer in their composition of one or more metals with respect to one or all of these metals do not match (Mo, W,Ta, Nb and/or Co) and a metal chalcogenide layer (second layer, 12). The invention also relates to the use of this multi layer back electrode for producing thin film solar cells and thin film solar modules to photovoltaic thin film solar cells and modules containing the multi layer back electrode and to a method for producing photovoltaic thin film solar cells and modules. |
