| 发明名称 |
Method of Fabricating Thin, Freestanding, Single Crystal Silicon Sheet |
| 摘要 |
A method of forming a free-standing silicon film that includes providing a Si substrate, depositing a layered structure on the Si substrate, where the layered structure includes a Si device layer and a SiGe sacrificial layer, and removing the SiGe sacrificial layer with a spin etch process, where the Si device layer is released from the layered structure. |
| 申请公布号 |
US2015118831(A1) |
申请公布日期 |
2015.04.30 |
| 申请号 |
US201414503801 |
申请日期 |
2014.10.01 |
| 申请人 |
The Board of Trustees of the Leland Stanford Junior University |
发明人 |
Iancu Andrei T.;Prinz Friedrich B. |
| 分类号 |
H01L21/02;H01L21/306 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a free-standing silicon film, comprising:
a. providing a Si substrate; b. depositing a layered structure on said Si substrate, wherein said layered structure comprises a Si device layer and a SiGe sacrificial layer; and c. removing said SiGe sacrificial layer using a spin etch process, wherein said Si device layer is released from said layered structure. |
| 地址 |
Palo Alto CA US |
