| 发明名称 |
IMAGE SENSOR AND DEVICES HAVING THE SAME |
| 摘要 |
An image sensor according to an example embodiment of includes a first pixel and a second pixel in a first row. The first pixel includes a first photoelectric conversion element at a first depth in a semiconductor substrate and the first photoelectric conversion element is configured to convert a first visible light spectrum into a first photo charge, and the second pixel includes a second photoelectric conversion element at a second depth from the first depth in the semiconductor substrate, the second photoelectric conversion element is at least partially overlapped by the first photoelectric conversion element in a vertical direction, and the second photoelectric conversion element is configured to convert a second visible light spectrum into a second photo charge. |
| 申请公布号 |
US2015116565(A1) |
申请公布日期 |
2015.04.30 |
| 申请号 |
US201414496445 |
申请日期 |
2014.09.25 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
KIM Seoung Hyun;KIM Mun Hwan;KIM Chan Hyung;YUN Jung Bin;JIN Young Gu;CHA Seung Won |
| 分类号 |
H04N5/374 |
主分类号 |
H04N5/374 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An image sensor comprising:
a first pixel and a second pixel in a first row, wherein the first pixel includes a first photoelectric conversion element at a first depth in a semiconductor substrate and the first photoelectric conversion element is configured to convert a first visible light spectrum into a first photo charge, and the second pixel includes a second photoelectric conversion element at a second depth from the first depth in the semiconductor substrate, the second photoelectric conversion element is at least partially overlapped by the first photoelectric conversion element in a vertical direction, and the second photoelectric conversion element is configured to convert a second visible light spectrum into a second photo charge. |
| 地址 |
Suwon-Si KR |
