| 摘要 |
The invention relates to a light-emitting device comprising a light-emitting diode (100) having a layer of n-doped InGaN (102) and a layer of p-doped GaN (104), and an active zone (110) comprising a number m of InGaN-emitting layers (112), each disposed between two InGaN barrier layers (114), in which the indium compositions of the emitting layers are different and greater on the side of the n-doped InGaN layer than on the side of the p-doped GaN layer, and the indium compositions of the barrier layers are different and greater on the side of the n-doped InGaN layer than on the side of the p-doped GaN layer, as well as comprising: an electric power supply for supplying the diode with a periodic signal; and a device for controlling the power supply, which can alter the peak value of the periodic signal according to a spectrum of the emitted light. |
