MULTI-LAYER N-TYPE STACK FOR CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF MAKING

摘要

THIN FILM PHOTOVOLTAIC DEVICES (10) ARE PROVIDED THAT GENERALLY INCLUDE A TRANSPARENT CONDUCTIVE OXIDE LAYER (14) ON THE GLASS (12), A MULTI-LAYER N-TYPE STACK (16) ON THE TRANSPARENT CONDUCTIVE OXIDE LAYER (14), AND A CADMIUM TELLURIDE LAYER (20) ON THE MULTI-LAYER N-TYPE STACK (16). THE MULTI-LAYER N-TYPE STACK (16) GENERALLY INCLUDES A FIRST LAYER (17) AND A SECOND LAYER (18), WHERE THE FIRST LAYER (17) COMPRISES CADMIUM AND SULFUR AND THE SECOND LAYER (18) COMPRISES CADMIUM AND OXYGEN. THE MULTI-LAYER N-TYPE STACK (16) CAN, IN CERTAIN EMBODIMENTS, INCLUDE ADDITIONAL LAYERS (E.G., A THIRD LAYER (19), A FOURTH LAYER, ETC.). METHODS ARE ALSO GENERALLY PROVIDED FOR MANUFACTURING SUCH THIN FILM PHOTOVOLTAIC DEVICES (10). (FIGURE 1)