| 摘要 |
PROBLEM TO BE SOLVED: To cancel coupling noise while suppressing increase of chip area in an open-bit line type semiconductor storage device.SOLUTION: A semiconductor storage device includes: a plurality of memory mats arranged in a line; and a sense amplifier column SAA disposed between neighboring memory mats, and activates a dummy word line DWL in the memory mats neighboring to the selected memory mat by responding to activation of a word line WL in the selected memory mat. The dummy word line DWL is not connected to dummy cells, so that it is not needed that a circuit for storing midpoint potential in the dummy cell. |
