发明名称 真空処理装置
摘要 <p><P>PROBLEM TO BE SOLVED: To improve the efficiency of wafer processing and suppress the contamination caused by flowing atmosphere gas of a vacuum processing chamber or a transfer relay chamber into another vacuum processing chamber or another transfer relay chamber. <P>SOLUTION: A vacuum processing apparatus includes an atmosphere transfer chamber 106 housing an atmosphere transfer device transferring a processed substrate to a lock chamber, a first vacuum transfer chamber 104 including a first vacuum processing device and a first transfer device which transfers the processed substrate in the lock chamber into/out from the first vacuum processing device, a second vacuum transfer chamber 111 including a second vacuum processing device and a second transfer device which transfers the processed substrate into/out from the second vacuum processing device, a transfer relay chamber 112 for delivering the processed substrate between the first vacuum transfer chamber and the second vacuum transfer chamber, a gas supply system which supplies gas to the first and second vacuum transfer chambers and exhausts gas in the first and second processing devices, the first and second vacuum transfer chambers, and the transfer relay chamber. The gas pressures of the vacuum transfer chambers are set higher than those of the vacuum processing devices and the transfer relay chamber. <P>COPYRIGHT: (C)2012,JPO&INPIT</p>
申请公布号 JP5710194(B2) 申请公布日期 2015.04.30
申请号 JP20100217495 申请日期 2010.09.28
申请人 发明人
分类号 H01L21/677;H01L21/3065 主分类号 H01L21/677
代理机构 代理人
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